Provide PDF Format
JEDEC JESD 24-3
- ADDENDUM No. 3 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR VERTICAL POWER MOSFETS (DELTA SOURCE-DRAIN VOLTAGE METHOD)
- Amendment by JEDEC Solid State Technology Association, 11/01/1990
- Publisher: JEDEC
$30.00$59.00
The purpose of this test method is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity if the forward voltage drop of the source-drain is used as the junction temperature indicator. This method is particularly suitable to enhancement mode, power MOSFETs having relatively long thermal response times. This test method may be used to measure the thermal response of junction to a heating pulse, to ensure proper die mountdown to its case, or the dc thermal resistance, by the proper choice of the pulse duration and magnitude if the heating pulse.
Related Products
JEDEC JESD67
I/O DRIVERS AND RECEIVERS WITH CONFIGURABLE COMMUNICATION VOLTAGE, IMPEDANCE, AND RECEIVER THRESHOLD..
$28.00 $56.00
JEDEC JESD234
Test Standard for the Measurement of Proton Radiation Single Event Effects in Electronic Devices..
$39.00 $78.00
JEDEC JESD51-2A
INTEGRATED CIRCUITS THERMAL TEST METHOD ENVIRONMENTAL CONDITIONS - NATURAL CONVECTION (STILL AIR)..
$31.00 $62.00